产品参数:
Detailed parameter description:
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 2.5V
- Drain-source resistance (m次) at VGS=10V: 100
- Maximum drain current (ID): 35A
- Technology: Trench
-Package: TO220F
领域和模块应用:
Its features include high drain-source voltage and moderate drain current, as well as high drain-source resistance, making it widely used in the following fields and modules:
1. Power module: VBMB1151M is suitable for switching power supplies, DC-DC converters and inverters in power modules. Its high drain-source voltage and current characteristics ensure stable and efficient operation of the module, while high drain-source resistance reduces power consumption and losses.
2. Automotive electronic modules: In the field of automotive electronics, VBMB1151M can be used for on-board power management, motor drive and lighting control modules. Its high voltage and current capabilities can meet the high power and performance needs of automotive electronic equipment, while the TO220F package can provide good heat dissipation performance.
3. Industrial control module: In the field of industrial control, VBMB1151M can be used for power management, drive control and power regulation modules in industrial control systems. Its reliable performance and high power processing capabilities make it an important part of industrial control modules, improving system reliability and efficiency.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性