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VBMB1101M 产品详细

产品简介:

VBsemi's VBMB1101M is a single N-channel power MOSFET suitable for a variety of low-power power electronic applications. Features include high drain-source voltage and low threshold voltage, making it suitable for power supply and driver applications requiring high efficiency and low power.

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产品参数:

**parameter:**
- **Type:** Single N
- **Maximum Drain-Source Voltage (VDS):** 100V
- **Maximum Gate-Source Voltage (VGS):** ㊣20V
- **Threshold voltage (Vth):** 1.8V
- **Drain-source resistance (m次) at VGS=10V:** 86m次
- **Maximum drain current (ID):** 18A
- **Technology:** Trench
- **Package:** TO220F

领域和模块应用:

**for example:**
1. **LED driver module:**
VBMB1101M can be used as a power switching device in LED driver modules to control the brightness and color temperature of LED lights. Its low threshold voltage and drain-source resistance help reduce switching losses, improve LED driver efficiency and stability, and are suitable for various indoor and outdoor LED lighting systems.

2. **Low power power module:**
In low-power power modules, VBMB1101M can be used as a power switching device in a switching power supply module to convert the DC voltage of the power supply. Its high drain-source voltage and low threshold voltage characteristics can support the power supply needs of small electronic devices, such as household appliances, mobile chargers, etc.

3. **Automotive electronic module:**
As a power switching device in automotive electronic modules, VBMB1101M can be used to control various functions in automotive electronic systems, such as car light control, electric window control, etc. Its high drain-source voltage and current capability support stable operation of automotive electronic systems, while its low threshold voltage and drain-source resistance help improve energy efficiency and extend battery life.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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