产品参数:
**VBsemi VBM2309 Power MOSFET**
**Parameter Description:**
- **Brand:** VBsemi
- **Model:** VBM2309
- **Package:** TO220
- **Single Pㄩ** Unipolar (P type)
- **Maximum Drain-Source Voltage (VDS):** -30V
- **Maximum Gate-Source Voltage (VGS):** ㊣20V
- **Threshold Voltage (Vth):** -2.5V
- **On-resistance (m次) when gate-source voltage is 4.5V:** 11
- **On-resistance (m次) when gate-source voltage is 10V:** 8
- **Maximum Drain Current (ID):** -70A
- **Technology:** Trench
领域和模块应用:
**for example:**
1. **Power module:** Since VBM2309 has a large drain-source voltage and drain current capacity, it is suitable for use in switching power supplies, DC-DC converters and inverters in power modules. In these modules, VBM2309 can be used as a power switching device to achieve efficient and stable energy conversion.
2. **Electric vehicle controller:** Electric vehicle controllers need to handle large current and high voltage power, and the characteristics of VBM2309 are suitable for this application scenario. It can be used as a power switch tube in the electric vehicle motor drive system to achieve efficient control and drive of the motor.
3. **Industrial automation equipment:** In industrial automation equipment, power MOSFETs are often used to control various motors, actuators, sensors and other equipment. The high voltage, high current and low on-resistance characteristics of VBM2309 make it an ideal choice in industrial automation systems and can be used in various control modules and drive devices.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性