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VBM2309 产品详细

产品简介:

VBsemi's VBM2309 is a power MOSFET that uses Trench technology and has excellent performance and stability. It is suitable for various power circuits and modules and can work stably under high voltage and high current.

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产品参数:

**VBsemi VBM2309 Power MOSFET**

**Parameter Description:**
- **Brand:** VBsemi
- **Model:** VBM2309
- **Package:** TO220
- **Single Pㄩ** Unipolar (P type)
- **Maximum Drain-Source Voltage (VDS):** -30V
- **Maximum Gate-Source Voltage (VGS):** ㊣20V
- **Threshold Voltage (Vth):** -2.5V
- **On-resistance (m次) when gate-source voltage is 4.5V:** 11
- **On-resistance (m次) when gate-source voltage is 10V:** 8
- **Maximum Drain Current (ID):** -70A
- **Technology:** Trench

领域和模块应用:

**for example:**
1. **Power module:** Since VBM2309 has a large drain-source voltage and drain current capacity, it is suitable for use in switching power supplies, DC-DC converters and inverters in power modules. In these modules, VBM2309 can be used as a power switching device to achieve efficient and stable energy conversion.

2. **Electric vehicle controller:** Electric vehicle controllers need to handle large current and high voltage power, and the characteristics of VBM2309 are suitable for this application scenario. It can be used as a power switch tube in the electric vehicle motor drive system to achieve efficient control and drive of the motor.

3. **Industrial automation equipment:** In industrial automation equipment, power MOSFETs are often used to control various motors, actuators, sensors and other equipment. The high voltage, high current and low on-resistance characteristics of VBM2309 make it an ideal choice in industrial automation systems and can be used in various control modules and drive devices.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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