MOSFET

您现在的位置 > 首页 > MOSFET

VBM2305 产品详细

产品简介:

VBsemi's VBM2305 is a single P-channel field effect transistor (FET) in a TO220 package.

文件下载

下载PDF 文档
立即下载

产品参数:

**Detailed parameter description:**

- Rated drain-source voltage (VDS): -30V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -3V
- Drain-source resistance (m次) at VGS=4.5V: 5
- Drain-source resistance (m次) at VGS=10V: 4
- Maximum drain current (ID): -100A
- Technology: Trench
-Package:TO220

领域和模块应用:

VBM2305 is suitable for a variety of fields and modules, such as:

In the power management module, VBM2305 can be used as a power switching device in switching power supplies. Due to its high drain current and low drain-source resistance, it can withstand large currents and has low on-resistance, making it suitable for power conversion circuits requiring high efficiency and low losses.

In the motor drive module, VBM2305 can be used in circuits that drive DC motors or stepper motors. Its high rated drain-source voltage and large drain current enable it to withstand higher voltages and currents, while its low drain-source resistance ensures low conduction losses and high efficiency.

In lighting control modules, VBM2305 can be used as power switching devices in LED drive circuits. Its high rated drain-source voltage and low drain resistance provide sufficient power output, and its low threshold voltage enables better performance under low-voltage driving.

In the power inverter module, VBM2305 can be used as a switching tube in the inverter circuit. Its high rated drain-source voltage and low drain resistance enable it to withstand higher voltages and currents, while its lower threshold voltage and Trench technology ensure lower conduction losses and high-efficiency inverter Change operation.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询