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VBM2202K 产品详细

产品简介:

VBM2202K is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET). The device is manufactured using trench technology.
The high performance and reliability of the VBM2202K enable it to play an important role in a variety of industrial and consumer electronics applications.

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产品参数:

The device is manufactured using trench technology and has the following main parameters:

- Rated drain-source voltage (VDS): -200V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 2400m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 2000m次
- Maximum drain current (ID): -4.5A

领域和模块应用:

The device is packaged in TO220. The application of trench technology gives it excellent performance in various applications.
For example, in power modules, VBM2202K is suitable for DC-DC converters, battery management systems and other fields. Its high rated voltage and low on-resistance make it particularly suitable for applications that need to withstand high voltage and high power, such as motor control modules in industrial automation equipment, inverter modules in UPS systems, etc. In addition, its high threshold voltage and low static power consumption also make it ideal for applications such as power adapters and power tool control modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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