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VBM2201K 产品详细

产品简介:

Application introduction:
VBM2201K is a high-performance single P-type field effect transistor (MOSFET) launched by VBsemi. It features reliable drain-source voltage and gate-source voltage, as well as low threshold voltage, making it suitable for a variety of power circuit designs. Made with Trench technology, it has good conduction characteristics and stability. The TO220 package facilitates installation and heat dissipation and is suitable for various applications.

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产品参数:

Product model: VBM2201K
Brand: VBsemi
parameter:
- Power supply type: Single P
- Maximum drain-source voltage (VDS): -200V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): -3V
- Drain-source resistance (m次) at VGS=4.5V: 1200
- Drain-source resistance (m次) at VGS=10V: 800
- Maximum drain current (ID): -5A
- Technology: Trench
Package: TO220



领域和模块应用:

for example:
1. Industrial power module: VBM2201K is suitable for power switching and regulating circuits in industrial power modules. Its high performance and stability can ensure stable output of the power system and have low energy loss.
2. Automotive electronic modules: In automotive electronic modules, VBM2201K can be used in switching circuits and voltage regulators in automotive power management systems to ensure the stable operation of automotive electronic equipment and improve energy efficiency.
3. LED lighting module: Since VBM2201K has lower drain-source resistance and higher drain-source voltage, it can be used for current driving and power control in LED lighting modules, providing efficient LED lighting solutions. .

The above is the detailed parameter description and application introduction of VBM2201K. This product is suitable for multiple fields and modules and can meet the needs of different applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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