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VBM2101N 产品详细

产品简介:

VBM2101N is a VBsemi brand single P-type field effect transistor, using trench technology (Trench). This product is packaged in TO220F.

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产品参数:

has the following parameters:
The maximum drain-source voltage (VDS) is -100V, the maximum gate-source voltage (VGS) is ㊣20V, and the threshold voltage (Vth) is -2V.
When the gate-source voltage is 4.5V, the drain-source resistance is 13m次; when the gate-source voltage is 10V, the drain-source resistance is 11m次. Its maximum drain current (ID) is -100A

领域和模块应用:


The VBM2101N transistor is suitable for a variety of fields and modules.
For example, in power amplifier modules, it can be used in audio amplifiers, power amplifiers and power switches. Due to its high drain-source current and low drain-source resistance, this transistor is particularly suitable for applications requiring high power density and high efficiency. In power management modules, it can be used in DC-DC converters, power switches and inverters. In addition, in industrial control modules, it can be used for motor control, power protection and power management. In short, the VBM2101N transistor has broad application prospects in various power control, power management and signal processing modules, and can provide high performance and reliability support for electronic equipment in different fields.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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