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VBM19R20S 产品详细

产品简介:

Product introduction:

VBM19R20S is a single N-channel MOSFET produced by VBsemi, with a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It adopts SJ_Multi-EPI technology and is packaged in TO220. This product features high drain current and moderate on-resistance, making it suitable for a variety of high-power applications.

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产品参数:

Detailed parameter description:

- VDS (drain-source voltage): 900V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance (m次) at VGS=10V: 270m次
- Maximum drain current (ID): 20A
- Technology: SJ_Multi-EPI
-Package: TO220

领域和模块应用:




Examples of applicable fields and modules:

1. Industrial power module: Because VBM19R20S has high drain current and moderate on-resistance, it is suitable for switching power supplies and inverter modules in industrial power modules.
2. High-performance electric vehicle charging piles: It can be used in power switches and control circuits in high-power electric vehicle charging piles to achieve fast charging.
3. High-power LED lighting: Suitable for power switching and dimming control in high-power LED lighting applications, providing powerful lighting solutions.
4. Industrial automation equipment: In the field of industrial automation, this product can be used for power switches and control circuits in PLC, frequency converters, servo drives and other equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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