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VBM19R15S 产品详细

产品简介:

Product introduction:
VBsemi's VBM19R15S is a single N-channel power MOSFET with a drain-source voltage (VDS) of 900V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology and packaged in TO220. The product is suitable for a variety of power electronics applications and offers reliability and efficient energy conversion characteristics.

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产品参数:

Detailed parameter description:
- Product model: VBM19R15S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 420
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO220

领域和模块应用:




Examples of applicable fields and modules:
1. Industrial power modules: Due to its high drain-source voltage and large drain current, VBM19R15S is suitable for industrial power modules such as inverters, DC power supplies and UPS.
2. Solar inverter: As a power switching element in a solar inverter, this product can achieve efficient conversion and output of solar energy.
3. Electric vehicles: In electric vehicles, VBM19R15S can be used to control the start, stop and speed adjustment of the motor to improve the performance and efficiency of electric vehicles.
4. Industrial automation: In industrial control systems, this MOSFET can be used in various motor drive and power switching applications, such as factory automation equipment, robotic arms, etc.
5. Power adapter: Due to its high on-resistance and large drain current, VBM19R15S is suitable for various power adapters, such as laptop chargers, mobile phone chargers, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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