产品参数:
Detailed parameter description:
- Product model: VBM19R11S
- Brand: VBsemi
- Type: Single channel N-channel power MOSFET
- Maximum drain-source voltage (VDS): 900V
- Gate-source voltage (VGS) range: ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 580
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO220
领域和模块应用:
Examples of application areas:
1. Industrial power module: VBM19R11S can be used as a switching power supply in industrial power modules to provide stable high-voltage power output and is suitable for factory equipment, machinery and other fields.
2. Electric vehicle charging piles: In electric vehicle charging piles, which need to withstand higher voltages and currents, VBM19R11S can be used as a switching element to control and regulate the charging process.
3. Solar inverter: In solar inverters, high-efficiency power switching devices are required to realize the conversion and output of solar energy. The high voltage and current characteristics of VBM19R11S make it an ideal choice for inverter modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性