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VBM19R09S 产品详细

产品简介:

Product introduction:
VBsemi's VBM19R09S is a single N-channel field effect transistor product with a drain-source voltage (VDS) of 900V, a drain current (ID) of 9A, and uses SJ_Multi-EPI technology. This product is packaged in TO220 and is suitable for a variety of applications.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 750m次
- Drain current (ID): 9A
- Technology: SJ_Multi-EPI

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: VBM19R09S is suitable for industrial power modules and can be used for power management and control of various industrial equipment.
2. Solar inverter: This product can be used in solar inverter modules to realize the conversion and output of solar energy and can be used in home and commercial solar power generation systems.
3. Electric vehicle drive system: In the field of electric vehicles, VBM19R09S can be used in the motor control unit (MCU) of electric vehicles to realize power transmission and control of electric vehicles.
4. LED lighting driver: In the field of LED lighting, this product can be used in LED driver circuits to provide stable current output for indoor and outdoor LED lighting equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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