产品参数:
Detailed parameter description:
- Product model: VBM19R07S
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 900V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 950
- Maximum drain current (ID): 7A
- Technology: SJ_Multi-EPI
-Package:TO220
领域和模块应用:
Examples of applicable fields and modules:
1. Power converter: Due to its high drain-source voltage and moderate drain current, VBM19R07S is suitable for various power converters, such as switching power supplies, AC-DC converters, etc.
2. Electric vehicles: As a power switching element in electric vehicles, the MOSFET can be used to control the start, stop and speed adjustment of the motor to improve the performance and efficiency of electric vehicles.
3. Industrial automation: In industrial control systems, VBM19R07S can be used in various motor drive and power switching applications, such as factory automation equipment, robotic arms, etc.
4. Solar inverter: As a power switching element in a solar inverter, this product can achieve efficient conversion and output of solar energy.
5. Power management module: Among various power management modules, VBM19R07S can be used for power switch control, such as power switches, voltage stabilizers, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性