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VBM195R03 产品详细

产品简介:

Product introduction:
VBsemi's VBM195R03 is a single N-type MOSFET with excellent electrical performance and reliability. Using Plannar technology, the drain-source voltage (VDS) is as high as 950V, which is suitable for various power application scenarios. The product is packaged in TO220 and is easy to install and use.

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产品参数:

Detailed parameter description:
- Product model: VBM195R03
- Brand: VBsemi
- Type: Single N-type MOSFET
- Maximum drain-source voltage (VDS): 950V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.3V
- Drain-source resistance (m次) at VGS=10V: 5400
- Maximum drain current (ID): 3A
- Technology: Plannar
-Package:TO220

领域和模块应用:


Application examples:
The product is suitable for a variety of fields and modules, such as:
1. Power supply system: Due to its high drain-source voltage and low drain-source resistance, it can be used in power modules such as switching power supplies and DC-DC converters.
2. Lighting control: It can be used as the power switch component in the LED lighting control circuit to realize the adjustment and control of the light.
3. Medical equipment: Suitable for power control and electrical control modules in various medical equipment, such as medical imaging equipment, medical monitors, etc.
4. Industrial automation: It can be used in motor control, frequency converter and other modules in industrial automation systems to improve the stability and efficiency of the system.

The above are some examples of applications of this product in different fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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