产品参数:
Detailed parameter description:
- Product model: VBM18R15S
- Brand: VBsemi
- Structure: Single N-channel field effect transistor
- Maximum drain-source voltage (VDS): 800V
- Maximum gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- Gate-source resistance (RDS(on)) (VGS=10V): 380m次
- Drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO220
领域和模块应用:
Examples of product applicable areas and modules:
1. Industrial power module: With a drain-source voltage of 800V and a drain current of 15A, VBM18R15S is suitable for various industrial power modules, such as for factory equipment, mechanical processing, etc., and can provide stable and reliable power output.
2. Switching power supply: It has low gate-source resistance and high drain-source voltage tolerance. It is suitable for various switching power supplies, such as UPS systems, chargers, etc., and can achieve efficient switching. control.
3. Electric vehicle power control: In the field of electric vehicles, VBM18R15S can be used as a key component in the electric vehicle power control module to control the power output and battery charging and discharging processes of electric vehicles.
To sum up, VBM18R15S is a field effect transistor product with stable performance and wide application. It can be widely used in fields and modules such as industrial power supply, switching power supply and electric vehicle power supply control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性