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VBM18R12S 产品详细

产品简介:

Product introduction:
VBM18R12S is a VBsemi brand Single N-type field effect transistor with a drain-source voltage (VDS) of 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. This product uses SJ_Multi-EPI technology and is packaged in TO220.

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产品参数:

Detailed parameter description:
- VDS(V): 800V
- VGS(㊣V): 30V
- Vth(V): 3.5V
- On-resistance when VGS=10V: 370m次
- Maximum drain current (ID): 12A

领域和模块应用:

Examples of applicable fields and modules:
- Industrial power module: VBM18R12S is suitable for switching power supplies and power transmission systems in industrial power modules to provide stable power output and efficient energy conversion.
- Solar inverter: In solar inverter, this product can be used in a DC-AC conversion module to convert the DC power generated by the solar panel into AC power that can be used in the grid.
- Electric vehicle charging piles: VBM18R12S is suitable for DC charging modules in electric vehicle charging piles, providing fast and efficient charging services for electric vehicles.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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