产品参数:
Detailed parameter description:
- Product model: VBM18R06SE
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 750
- Maximum drain current (ID): 6A
- Technology: SJ_Deep-Trench
-Package:TO220
领域和模块应用:
Examples of applicable fields and modules:
1. Power adapter: Due to its low drain current and high drain-source voltage, VBM18R06SE is suitable for various power adapters, such as laptop chargers, mobile phone chargers, etc.
2. Lighting system: In the LED lighting system, the MOSFET can be used to drive LED lamp beads to achieve dimming and switching control of the light.
3. Power tools: In power tools, VBM18R06SE can be used to drive motors, such as electric drills, electric hammers, etc., to achieve efficient power transmission and control.
4. Electric vehicles: As a power switching element in electric vehicles, the MOSFET can be used to control the start, stop and speed adjustment of the motor to improve the performance and efficiency of electric vehicles.
5. Industrial automation: In industrial control systems, VBM18R06SE can be used in various motor drive and power switching applications, such as factory automation equipment, robotic arms, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性