MOSFET

您现在的位置 > 首页 > MOSFET

VBM18R06SE 产品详细

产品简介:

Product introduction:
VBsemi's VBM18R06SE is a single N-channel power MOSFET with a drain-source voltage (VDS) of up to 800V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It is manufactured using SJ_Deep-Trench technology and packaged in TO220. This MOSFET is suitable for a variety of power electronics applications, providing reliable performance and efficient energy conversion.

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- Product model: VBM18R06SE
- Brand: VBsemi
- Type: Single N-channel power MOSFET
- Drain-source voltage (VDS): 800V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 750
- Maximum drain current (ID): 6A
- Technology: SJ_Deep-Trench
-Package:TO220

领域和模块应用:

Examples of applicable fields and modules:
1. Power adapter: Due to its low drain current and high drain-source voltage, VBM18R06SE is suitable for various power adapters, such as laptop chargers, mobile phone chargers, etc.
2. Lighting system: In the LED lighting system, the MOSFET can be used to drive LED lamp beads to achieve dimming and switching control of the light.
3. Power tools: In power tools, VBM18R06SE can be used to drive motors, such as electric drills, electric hammers, etc., to achieve efficient power transmission and control.
4. Electric vehicles: As a power switching element in electric vehicles, the MOSFET can be used to control the start, stop and speed adjustment of the motor to improve the performance and efficiency of electric vehicles.
5. Industrial automation: In industrial control systems, VBM18R06SE can be used in various motor drive and power switching applications, such as factory automation equipment, robotic arms, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询