产品参数:
Detailed parameter description:
- Model: VBM185R05
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: Plannar
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 2200m次
- Maximum drain current (ID): 5A
-Package:TO220
领域和模块应用:
Applicable areas and modules:
This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and moderate on-resistance, it is suitable for designing high-voltage switching power supplies and voltage regulators.
2. Electric vehicle controller: It can be used in the power electronic controller of electric vehicles to achieve high-efficiency drive and control of the electric motor.
3. Wind power generation system: In the wind power generation system, it can be used in inverters and control modules to convert wind energy into electrical energy and connect it to the grid.
4. Industrial welding equipment: In industrial welding equipment, it can be used in power switch modules to provide reliable power supply and control functions.
These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性