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VBM185R05 产品详细

产品简介:

Product introduction:

VBsemi's VBM185R05 is a Single N-type field effect transistor manufactured using Plannar technology. It features a drain-to-source voltage (VDS) of up to 850V and supports a maximum gate-source voltage (VGS) of 30V. In addition, it has a gate threshold voltage (Vth) of 3.5V, an on-resistance of 2200mΩ when VGS is 10V, and a maximum drain current (ID) of 5A. This product is packaged as TO220.

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产品参数:

Detailed parameter description:

- Model: VBM185R05
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Technology: Plannar
- Drain-source voltage (VDS): 850V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 2200m次
- Maximum drain current (ID): 5A
-Package:TO220

领域和模块应用:

Applicable areas and modules:

This product is suitable for the following areas and modules:
1. Power management module: Due to its high drain-source voltage and moderate on-resistance, it is suitable for designing high-voltage switching power supplies and voltage regulators.
2. Electric vehicle controller: It can be used in the power electronic controller of electric vehicles to achieve high-efficiency drive and control of the electric motor.
3. Wind power generation system: In the wind power generation system, it can be used in inverters and control modules to convert wind energy into electrical energy and connect it to the grid.
4. Industrial welding equipment: In industrial welding equipment, it can be used in power switch modules to provide reliable power supply and control functions.

These are just some examples, in fact this product may also be suitable for many other fields and modules, depending on its technical parameters and application requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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