产品参数：
Detailed parameter description of this model product:
1. Product model: VBM185R04
2. Brand: VBsemi
3. Parameters:
- Type: Single N-type MOSFET
- Technology: Plannar
-Package: TO220
- Rated drain-source voltage (VDS): 850V
- Standard gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 2700m次
- Maximum drain current (ID): 4A
领域和模块应用：
Examples of applicable fields and modules:
1. Power module: VBM185R04 is suitable for designing power modules in the industrial and communication fields, such as switching power supplies, inverters and voltage regulators, etc., which can achieve stable output of high-voltage power supply.
2. Electric vehicle charger: In an electric vehicle charger, VBM185R04 can be used as a switching tube to control the output voltage and current of the charger to achieve fast and efficient charging.
3. Solar inverter: This type of MOSFET is suitable for the power switch module in the solar inverter, used to convert the DC power generated by the solar panel into AC power and connect it to the power grid.
4. LED driver: VBM185R04 has low on-resistance and high rated voltage, and is suitable for power switching circuits in LED drivers to help achieve efficient driving and stable light output of LED lights.
5. Industrial control module: In the field of industrial control, VBM185R04 can be used in motor control modules and power switches and drive circuits in industrial automation equipment to achieve efficient and stable industrial production processes.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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