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VBM185R02 产品详细

产品简介:

Product introduction:
VBM185R02 is a single N-channel MOSFET of the VBsemi brand, using Plannar technology and packaged in TO220. The product features a drain-source voltage (VDS) of 850V, is capable of withstanding a gate-source voltage (VGS) of ±30V, and has a threshold voltage (Vth) of 3.5V. When VGS=10V, it has an on-resistance of 6500mΩ. Rated drain current (ID) is 2A and suitable for a variety of industrial and electronic applications.

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产品参数:

Detailed parameter description:
- Product model: VBM185R02
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 850V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- On-resistance when VGS=10V: 6500m次
- Rated drain current (ID): 2A
- Technology: Plannar
-Package:TO220

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: VBM185R02 has a high drain voltage and rated drain current. It is suitable for switching power supplies, inverters and converters in industrial power modules and can be used in the fields of industrial control and automation.
2. LED lighting control: In LED lighting systems, power switching devices need to withstand high voltages. VBM185R02 can be used for switch control in LED drive circuits to help achieve brightness adjustment and energy-saving control of LED lights.
3. Solar photovoltaic inverter: VBM185R02 can be used as a key component of solar photovoltaic inverter to help achieve efficient conversion of solar energy and access to the grid.
4. Electric vehicle charging piles: In electric vehicle charging piles, power switching devices need to withstand high voltage and current. VBM185R02 can be used for switch control and power management of electric vehicle charging piles to achieve fast charging and safe power supply of electric vehicles.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

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