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VBM17R20SE 产品详细

产品简介:

Product introduction:
VBsemi's VBM17R20SE is a Single N-type MOSFET with the following features:
- Brand: VBsemi
-Package: TO220
- Technology: SJ_Deep-Trench
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 165 mΩ
- Maximum drain current (ID): 20A

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产品参数:

Detailed parameter description:
- Model: VBM17R20SE
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220
- Technology: SJ_Deep-Trench
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 165 m次
- Maximum drain current (ID): 20A

领域和模块应用:

aExamples of applicable fields and modules:
1. Electric vehicle motor driver: VBM17R20SE has the characteristics of high current and low on-resistance. It is suitable for power switch modules in electric vehicle motor drivers and is used to control the electric drive system of electric vehicles.
2. Solar inverter: In solar inverter, high voltage and high current switching devices are required to achieve solar power conversion, and the parameters of VBM17R20SE make it a suitable choice for this application.
3. Power supply module: Due to its high power and high efficiency, VBM17R20SE is suitable for power supply modules, such as power inverters and power switch modules, for power management and power conversion in industrial and consumer electronic equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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