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VBM17R15SE 产品详细

产品简介:

Product introduction:
VBM17R15SE is a single N-channel MOSFET produced by VBsemi. This product is suitable for a variety of applications requiring high performance and reliability. With a VDS rating of 700V and a continuous drain current (ID) of 15A, it uses SJ_Deep-Trench technology to ensure stability and reliability in various environments.

Detailed parameter description:
- VDS(V): drain-source voltage - 700V
- VGS(±V): Gate-source voltage (±) - 30V
- Vth(V): Threshold voltage - 3.5V
- VGS=10V(mΩ): On-resistance at VGS=10V - 260 mΩ
- ID (A): Continuous Drain Current - 15A
- Technology: SJ_Deep-Trench

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产品参数:

Parameter: Single N
VDS(V)ㄩ700
VGS(㊣V): 30
Vth(V)ㄩ3.5
VGS=10V(m次): 260
ID (A): 15
TechnologyㄩSJ_Deep-Trench
Package: TO220

领域和模块应用:

Application scenarios:
The VBM17R15SE MOSFET is suitable for many areas and modules, here are some examples:
- Power Converters: Used in various types of power converters and inverters such as switching power supplies, UPS power supplies and solar inverters.
- Motor drives: Suitable for a variety of motor drive applications, including electric vehicle drives, industrial machinery and home appliances.
- Power management: Can be used in various power management and current control applications to provide stable power output and efficient energy conversion.
- Automotive electronics: used in automotive battery management, electric vehicle charging systems and vehicle power management.
- High voltage applications: Can be used in circuits and systems requiring high voltage and power, such as industrial equipment, medical equipment and communication base stations.

VBM17R15SE MOSFET has high performance and reliability and is suitable for a variety of fields and modules. It is one of the first choices of engineers.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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