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VBM17R15S 产品详细

产品简介:

Product introduction: VBsemi's VBM17R15S is a single N-channel MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Multi-EPI technology, with TO220 package, suitable for a variety of application scenarios.

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产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 700V, VGS (gate-source voltage) is ㊣30V.
- Threshold voltage: Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the minimum resistance at turn-on is 350m次, and the maximum drain current is 15A.

领域和模块应用:

Examples of applicable fields and modules:
1. Power converter: VBM17R15S can be used in the switching circuit of the power converter to achieve efficient energy conversion and is suitable for various power supply systems.
2. Electric vehicle control: In electric vehicles, this product can be used in motor control and battery management systems to provide reliable power output and power management.
3. Industrial automation equipment: In industrial automation equipment, VBM17R15S can be used for control modules and drivers to ensure stable operation and efficient production of equipment.

The above is an introduction to VBsemi's VBM17R15S product, detailed parameter descriptions, and examples of applicable fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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