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VBM17R12 产品详细

产品简介:

Product introduction:
VBM17R12 is a Single N-type field effect transistor produced by the VBsemi brand. It is manufactured using Plannar technology and packaged in TO220. The product features a drain-source voltage (VDS) of up to 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its on-resistance is 870mΩ at a gate-source voltage of 10V, and its maximum drain current (ID) is 12A.

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产品参数:

Detailed parameter description:
- Product model: VBM17R12
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 10V: 870m次
- Maximum drain current (ID): 12A
- Technology: Plannar
-Package:TO220

领域和模块应用:

Examples of product applicable fields and modules:
1. Power module: Because VBM17R12 has high drain current and withstand voltage characteristics, it is suitable for various power conversion and power management modules, such as switching power supplies, inverters, etc.
2. Electric vehicle controller: This product can be used as a power switch module in an electric vehicle controller to achieve efficient drive and control of the motor.
3. Industrial control equipment: It can be used in power switch modules in various industrial control equipment, such as PLC, frequency converters, etc., to improve the performance and reliability of the equipment.
4. Solar photovoltaic inverter: suitable for power switch modules in solar photovoltaic inverters to improve the conversion efficiency and stability of the system and achieve efficient utilization of solar energy.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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