产品参数:
Detailed parameter description:
- Product model: VBM17R12
- Brand: VBsemi
- Type: Single N-type field effect transistor
- Maximum drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): 30V (positive and negative)
- Threshold voltage (Vth): 3.5V
- On-resistance at gate-source voltage 10V: 870m次
- Maximum drain current (ID): 12A
- Technology: Plannar
-Package:TO220
领域和模块应用:
Examples of product applicable fields and modules:
1. Power module: Because VBM17R12 has high drain current and withstand voltage characteristics, it is suitable for various power conversion and power management modules, such as switching power supplies, inverters, etc.
2. Electric vehicle controller: This product can be used as a power switch module in an electric vehicle controller to achieve efficient drive and control of the motor.
3. Industrial control equipment: It can be used in power switch modules in various industrial control equipment, such as PLC, frequency converters, etc., to improve the performance and reliability of the equipment.
4. Solar photovoltaic inverter: suitable for power switch modules in solar photovoltaic inverters to improve the conversion efficiency and stability of the system and achieve efficient utilization of solar energy.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性