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VBM17R11SE 产品详细

产品简介:

Product introduction:
VBsemi's VBM17R11SE is a single N-channel MOSFET manufactured using SJ_Deep-Trench technology. It has high performance and reliability, and is packaged in TO220, suitable for various applications.

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产品参数:

Detailed parameter description:
- Brand: VBsemi
- Model: VBM17R11SE
- Type: Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at VGS=10V: 360m次
- Maximum drain current (ID): 11A
- Technology: SJ_Deep-Trench
-Package:TO220

领域和模块应用:

Application example:
The product is suitable for multiple areas and modules, such as:
- Electric vehicle controller: used in drive control systems for electric vehicles to achieve efficient energy conversion and motor control.
- Industrial power module: can be used for power management and control of industrial equipment, including frequency converters, machine tools, and welding equipment.
- LED lighting driver: suitable for power switching and brightness adjustment of LED lamps to achieve high-efficiency lighting control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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