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VBM17R07S 产品详细

产品简介:

Product introduction:
The VBsemi VBM17R07S is a single N-channel field effect transistor with a drain-to-source voltage (VDS) of up to 700V and a drain current (ID) of 7A. Made with SJ_Multi-EPI technology, it has reliable performance and stability. The package is TO220, suitable for a variety of applications.

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产品参数:

Detailed parameter description:
- Model: VBM17R07S
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 750
- Drain current (ID): 7A
- Process technology: SJ_Multi-EPI
-Package:TO220

领域和模块应用:

Examples of applicable fields and modules:
1. Lighting module: Due to its high drain voltage and reliability, it is suitable for LED lighting drivers and switching power supply modules.
2. Solar inverter: The switch module used in the solar inverter converts the DC output of the solar panel into alternating current.
3. Power tools: Can be used in drive modules in power tools, such as electric drills, electric hammers, etc.
4. Automotive electronics: Suitable for power management and motor drive modules in automotive electronic systems, such as engine control units (ECUs) and electric vehicle drive controllers.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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