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VBM17R05SE 产品详细

产品简介:

Product introduction: VBsemi's VBM17R05SE is a single N-channel MOSFET with a drain-source voltage (VDS) of 700V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Manufactured using SJ_Deep-Trench technology, with TO220 package, suitable for a variety of application scenarios.

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产品参数:


Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 700V, VGS (gate-source voltage) is ㊣30V.
- Threshold voltage: Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the minimum resistance at turn-on is 840m次, and the maximum drain current is 5A.

领域和模块应用:

Examples of applicable fields and modules:
1. Low-power electronic equipment: Because VBM17R05SE has low drain current characteristics, it is suitable for electronic equipment that requires low power consumption, such as portable electronic products and smart home equipment.
2. Power management module: In the power management module, this product can be used for voltage stabilization and power switching to ensure the stability and efficiency of power supply. It is widely used in industrial and consumer electronics fields.
3. LED lighting control: In LED lighting systems, VBM17R05SE can be used in LED driver modules to achieve efficient control and dimming of LED lights, energy saving and environmental protection.

The above is an introduction to VBsemi's VBM17R05SE product, detailed parameter descriptions, and examples of applicable fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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