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VBM17R05S 产品详细

产品简介:

Product introduction:
VBsemi's VBM17R05S is a Single N-type MOSFET with the following features:
- Brand: VBsemi
-Package: TO220
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ±30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 1100 mΩ
- Maximum drain current (ID): 5A

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产品参数:

Detailed parameter description:
- Model: VBM17R05S
- Product type: Single N-type MOSFET
- Brand: VBsemi
- Package type: TO220
- Technology: SJ_Multi-EPI
- Maximum drain-source voltage (VDS): 700V
- Maximum gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 1100 m次
- Maximum drain current (ID): 5A

领域和模块应用:

Examples of applicable fields and modules:
1. Power inverter: Since VBM17R05S has a high drain-source voltage and on-resistance, it is suitable for high-voltage switching modules in power inverters to convert DC power to AC power.
2. Solar inverter: In solar inverters, switching devices with high voltage and low on-resistance are required to achieve solar power conversion, and the parameters of VBM17R05S make it a suitable choice for this application.
3. Automotive electronic systems: The packaging and parameters of VBM17R05S make it suitable for power switch modules in automotive electronic systems, such as electric drive systems and charging systems of electric vehicles.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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