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VBM175R06 产品详细

产品简介:

Product introduction:

VBM175R06 is a single N-channel field effect transistor product produced by VBsemi. It has a drain-source voltage (VDS) of 750V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. When VGS=10V, the resistance in the on state is 1700mΩ, and the maximum drain current (ID) is 6A. It adopts Plannar technology and is packaged in TO220.

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产品参数:

Detailed parameter description:

- Product model: VBM175R06
- Brand: VBsemi
- Parameters:
- Drain-source voltage (VDS): 750V
- Gate-source voltage (VGS): 30V (㊣)
- Threshold voltage (Vth): 3.5V
- On-state resistance (m次) when VGS=10V: 1700
- Maximum drain current (ID): 6A
- Technology: Plannar
-Package:TO220

领域和模块应用:

Examples of application areas and modules:

VBM175R06 products are suitable for the following fields and modules:

1. Power management module: Due to its high drain voltage and large drain current, it can be used to design high-performance switching power supply modules, such as DC-DC converters.
2. Electric vehicle charging pile: As the power switching element of the charging pile, it is used to control the output power of the charging pile to achieve fast charging of electric vehicles.
3. Power switch: used for various types of power switches, such as power adapters, UPS power supplies, etc., to ensure efficient power supply for equipment.
4. Industrial control system: In industrial automation control systems, it can be used in motor drivers, inverters and other modules to achieve efficient control of industrial production equipment and energy conversion.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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