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VBM16R41SFD 产品详细

产品简介:

Product introduction:

VBsemi's VBM16R41SFD is a single N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) device with high performance and reliability. The device is manufactured using SJ_Multi-EPI technology and is packaged in TO220. It has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. When VGS=10V, its on-resistance is 62mΩ and the maximum drain current (ID) is 41A.

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产品参数:

Detailed parameter description:

- Product model: VBM16R41SFD
- Brand: VBsemi
- Company: Shenzhen Weibi Semiconductor Co., Ltd.
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 62m次
- Maximum drain current (ID): 41A
- Manufacturing process: SJ_Multi-EPI
-Package form: TO220

领域和模块应用:

Examples of applicable fields and modules:

1. Industrial power module: The high drain-source voltage and high current characteristics of VBM16R41SFD make it suitable for industrial power modules and can be used in applications such as switching power supplies, inverters and frequency converters.
2. Electric vehicle charging piles: The high performance and reliability of this device make it a key component in electric vehicle charging piles and can be used for power switch control of DC fast charging piles and AC charging piles.
3. Solar inverter: VBM16R41SFD can be used as a power switch module in a solar inverter to achieve effective conversion and output of solar photovoltaic energy.
4. Industrial control system: In industrial control systems, this device can be used in modules such as motor control, power distribution and high-voltage switchgear to provide reliable power control and protection functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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