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VBM16R34SFD 产品详细

产品简介:

Product introduction:

VBM16R34SFD is a single N-channel MOSFET device launched by VBsemi Company with high performance and reliability. Manufactured using SJ_Multi-EPI technology and packaged in TO220. The device has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 80mΩ at VGS=10V, and a maximum drain current ( ID) is 34A.

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产品参数:

Detailed parameter description:

- Product model: VBM16R34SFD
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 80m次
- Maximum drain current (ID): 34A
- Manufacturing process: SJ_Multi-EPI
-Package form: TO220

领域和模块应用:

Examples of applicable fields and modules:

1. Industrial power modules: Due to its suitable voltage and current characteristics, VBM16R34SFD can be used as power switches in industrial power modules, such as for output control of switching power supplies and inverters.
2. Electric vehicle charging piles: This device can be used in the power switch module of electric vehicle charging piles to achieve safe and efficient charging of electric vehicles by charging piles.
3. Solar inverter: In solar inverter, VBM16R34SFD can be used as a power switch to realize the conversion and output of solar photovoltaic energy.
4. Power tool and home appliance control: In power tool and home appliance control systems, this device can be used for switch control, drive motor and power regulation to improve the performance and reliability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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