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VBM16R12 产品详细

产品简介:

Product introduction:
VBM16R12 is a single N-channel MOSFET model produced by VBsemi. It has a drain-to-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 12A. Manufactured using Plannar technology and packaged in TO220.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=4.5V: 288
- On-resistance (m次) when VGS=10V: 360
- Drain current (ID): 12A
- Technology: Plannar

领域和模块应用:

Examples of applicable fields and modules:
1. Power switch: VBM16R12 can be used as various types of power switches, such as switching power supplies, inverters and DC-DC converters, and is widely used in industrial, automotive and home appliances.
2. Automotive electronic systems: As a power switching device in automotive electronic systems, the MOSFET can be used to drive electric motors, battery management and on-board charging equipment, providing efficient and stable energy conversion and control functions.
3. Lighting application: used in LED drivers and lighting systems to control the brightness and current of LEDs to achieve energy-saving and environmentally friendly lighting effects. It is widely used in homes, businesses and public places.
4. Industrial automation equipment: VBM16R12 can be used in motor control and drive modules in industrial automation equipment to achieve precise motion control and efficient energy conversion, improving the production efficiency and stability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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