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VBM16R11SE 产品详细

产品简介:

Product introduction:
Model: VBM16R11SE
Brand: VBsemi
Package: TO220
parameter:
-Single N
- VDS(V): 600
-VGS(±V): 30
-Vth(V): 3.5
- VGS=10V(mΩ): 310
- ID (A): 11
- Technology: SJ_Deep-Trench

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产品参数:

Detailed parameter description:
1. Single N: Single N channel
2. VDS(V): 600 - Saturated Drain-Source Voltage
3. VGS(㊣V): 30 - Gate-source voltage (maximum)
4. Vth(V): 3.5 - Gate threshold voltage
5. VGS=10V(m次): 310 - Drain-source resistance at VGS=10V
6. ID (A): 11 - Continuous Drain Current
7. Technology: SJ_Deep-Trench - deep trench structure technology

领域和模块应用:

Applicable areas and modules:
1. Low-power electronic devices: Due to its low drain-source resistance and moderate drain current, it is suitable for low-power electronic devices, such as power control modules in mobile devices and smart wearable devices.
2. Lighting applications: In lighting applications such as low-power LED drivers and lighting controllers, due to its high drain-source resistance and stable performance.
3. Small electronic equipment: Due to its TO220 package and low power consumption characteristics, it is suitable for use in power control and switching circuits in small electronic equipment.
4. Battery management system: In the battery management system, such as battery charge and discharge controller and battery protection module, they can be used to control the current and voltage during charging and discharging.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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