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VBM16R11S 产品详细

产品简介:

Product introduction: VBsemi's VBM16R11S is a single N-type field effect transistor with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Suitable for a variety of power and electronic applications.

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产品参数:

Detailed parameter description:
- VDS (drain-source voltage): 600V
- VGS (gate-to-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- On-resistance (m次) when VGS=10V: 380
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO220

领域和模块应用:

Application example:
- Power inverter: Due to its high drain-source voltage and moderate current capacity, it is suitable for applications such as solar inverters and UPS inverters.
- Power tools: Motor drive systems that can be used in electric drills, electric saws and other tools, providing efficient power conversion and reliable performance.
- Automotive electronics: In automotive electronic systems, it can be used in motor controllers and powertrain management systems of electric vehicles to support high voltage and moderate current requirements.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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