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VBM16R10 产品详细

产品简介:

Product introduction: VBsemi's VBM16R10 is a TO220 packaged N-channel field effect transistor, manufactured using Plannar technology. It has a drain-to-source voltage (VDS) of 600V, a drain current (ID) of 10A, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and an on-resistance (VGS) of 1000mΩ =10V). This product is suitable for low to medium power applications.

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产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 600V, VGS (gate-source voltage) is ㊣30V, Vth (gate threshold voltage) is 3.5V.
- Current parameters: ID (drain current) is 10A.
-Technical features: Using Plannar technology.
- On-resistance: 1000m次 at VGS=10V.
- Package: TO220.

领域和模块应用:

Examples of applicable fields and modules:
1. Power switch module: Suitable for medium and low power power switch modules, such as household power adapters, power tool chargers, etc.
2. Low power inverter: used for medium and low power inverter modules, such as small fans, water pump drivers, etc.
3. Automotive electronics: used in medium and low power modules in automotive electronic systems, such as interior lighting, car chargers, etc.
4. LED lighting controller: In low and medium power LED lighting products, it can be used to drive LED lamp beads, such as home lighting fixtures, landscape lights, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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