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VBM16R08SE 产品详细

产品简介:

Product introduction:

The VBsemi branded VBM16R08SE is a single N-channel MOSFET device offering high performance and reliability. Manufactured using SJ_Deep-Trench technology and packaged in TO220. The device has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 460mΩ at VGS=10V, and a maximum drain current ( ID) is 8A.

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产品参数:

Detailed parameter description:

- Product model: VBM16R08SE
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 460m次
- Maximum drain current (ID): 8A
- Manufacturing process: SJ_Deep-Trench
-Package form: TO220

领域和模块应用:

Examples of applicable fields and modules:

1. Low-power electronic products: Because VBM16R08SE has low leakage current and low on-resistance characteristics, it is suitable for various low-power electronic products, such as mobile devices, portable electronic products, etc.
2. LED lighting control: In LED lighting systems, this device can be used in the power switch control module of LED lamps to provide stable power output and efficient power conversion.
3. Power management module: VBM16R08SE is suitable for power management modules, such as switching power supplies, battery charge and discharge management systems, etc., to provide stable and efficient power control and protection.
4. Automotive electronics: In automotive electronic systems, this device can be used in power switch modules such as vehicle charging piles and engine control units (ECUs) to achieve efficient power conversion and control.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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