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VBM16R08 产品详细

产品简介:

Product introduction:

VBsemi's VBM16R08 is a single N-type MOSFET with a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS, positive and negative) of 30V, and a threshold voltage (Vth) of 3.5V. It uses Plannar technology and is packaged as TO220.

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产品参数:

Detailed parameter description:

- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS, positive and negative): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=4.5V: 1070
- On-resistance (m次) at VGS=10V: 780
- Maximum drain current (ID): 8A

领域和模块应用:

Examples of applicable fields and modules:

- Low frequency power converter: suitable for power switches in low frequency power converters, such as household appliances, consumer electronics, etc.
- Motor driver: can be used for power switches in motor drivers, such as motor drives in power tools, household appliances, etc.
- LED lighting controller: In the LED lighting system, it can be used as a switch tube for the LED driver to realize the control and adjustment of the LED light source and improve the energy efficiency and stability of the lighting system.
- Automotive electronic systems: Suitable for power management and drive control in automotive electronic systems, such as vehicle power management, drive control, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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