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VBM16R07 产品详细

产品简介:

Product introduction:

VBM16R07 is a single N-channel MOSFET device launched by the VBsemi brand with high performance and reliability. Manufactured using Plannar technology and packaged in TO220. The device has a drain-source voltage (VDS) of 600V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 1200mΩ at VGS=10V, and a maximum drain current ( ID) is 7A.

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产品参数:

Detailed parameter description:

- Product model: VBM16R07
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 1200m次
- Maximum drain current (ID): 7A
- Manufacturing process: Plannar
-Package form: TO220

领域和模块应用:

Examples of applicable fields and modules:

1. Low-power electronic products: Since VBM16R07 has low leakage current and moderate power characteristics, it is suitable for various low-power electronic products, such as household appliances, small power adapters, etc.
2. LED lighting control: In LED lighting systems, this device can be used in the power switch control module of LED lamps to provide stable power output and brightness adjustment.
3. Low-power power management: VBM16R07 is suitable for low-power power management modules, such as standby power supplies, chargers, etc., providing stable and efficient power control and protection.
4. Automotive electronics: In automotive electronic systems, this device can be used for power switch control in vehicle electronic products, such as vehicle entertainment systems, interior lighting, etc., to provide reliable power control and protection.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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