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VBM16R04 产品详细

产品简介:

Product introduction: VBM16R04 is a VBsemi brand single N-type field effect transistor, which is packaged as TO220 using Plannar technology. Features 600V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), 1040mΩ (VGS=4.5V) and 1300mΩ (VGS=10V) on-resistance and 4A drain current (ID).

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 600V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 4.5V: 1040m次
- On-resistance when gate-source voltage is 10V: 1300m次
- Drain current (ID): 4A
- Technology: Plannar
-Package:TO220

领域和模块应用:

Examples of applicable fields and modules:
1. Power management module: suitable for power inverters, DC-DC converters and other modules to provide stable power conversion and power control.
2. Industrial electrical equipment: Power switch modules in industrial control systems provide precise control of motors and equipment, improving production efficiency and energy utilization.
3. Solar and wind energy converters: used in solar inverters, wind power inverters and other fields to convert renewable energy into usable electrical energy and inject it into the grid.
4. Electric vehicle charger: The power switch module in the electric vehicle charging pile realizes the control and management of the charging process of electric vehicles.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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