MOSFET

您现在的位置 > 首页 > MOSFET

VBM16R02 产品详细

产品简介:

Product introduction:
Model: VBM16R02
Brand: VBsemi
Package: TO220
parameter:
-Single N
- VDS(V): 600
-VGS(±V): 30
-Vth(V): 3.5
- VGS=4.5V(mΩ): 6000
- VGS=10V(mΩ): 4800
-ID(A): 2
- Technology: Plannar

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
1. Single N: Single N channel
2. VDS(V): 600 - Saturated Drain-Source Voltage
3. VGS(㊣V): 30 - Gate-source voltage (maximum)
4. Vth(V): 3.5 - Gate threshold voltage
5. VGS=4.5V(m次): 6000 - Drain-source resistance at VGS=4.5V
6. VGS=10V(m次): 4800 - Drain-source resistance at VGS=10V
7. ID (A): 2 - Continuous Drain Current
8. Technology: Plannar - Planar structure technology

领域和模块应用:

Applicable areas and modules:
1. Low-power electronic devices: Due to its low drain-source resistance and low power consumption characteristics, it is suitable for low-power electronic devices such as sensor interfaces and microcontroller power management.
2. Power module: In low-power power modules, such as switching power supplies and regulated power supplies, they can be used to achieve power conversion and voltage stabilization control.
3. Automation control: Suitable for power switch modules in automation control systems, such as drivers and controllers in industrial automation and smart manufacturing.
4. LED lighting: Can be used in lighting applications such as LED drivers and lighting controllers due to its high drain-source resistance and stable performance.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询