MOSFET

您现在的位置 > 首页 > MOSFET

VBM165R32S 产品详细

产品简介:

Product introduction:
VBM165R32S is a Single N-type MOSFET produced by VBsemi, manufactured using SJ_Multi-EPI technology. The device has a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. Its package is TO220.

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Gate threshold voltage (Vth): 3.5V
- Drain-source resistance (m次) at 10V gate voltage: 85m次
- Maximum drain current (ID): 32A
- Technology: SJ_Multi-EPI

领域和模块应用:

Application example:
- Power module: Since VBM165R32S has a high drain-source voltage and a large drain current, it is suitable for various power modules, such as switching power supplies, inverters and frequency converters.
- Electric vehicle charging piles: The device's high voltage and high current characteristics make it ideal for power switches and inverters in electric vehicle charging piles.
- Solar inverter: Due to its high performance and voltage resistance characteristics, this device can be used in solar inverters to convert DC power generated by solar panels into AC power.
- Industrial electronics: In industrial electronic equipment, the VBM165R32S can be used to drive high-power motors and perform other high-power applications.

*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询