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VBM165R25S 产品详细

产品简介:

Product introduction:

The VBsemi branded VBM165R25S is a single N-channel MOSFET device offering high performance and reliability. Manufactured using SJ_Multi-EPI technology and packaged in TO220. The device has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 115mΩ at VGS=10V, and a maximum drain current ( ID) is 25A.

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产品参数:

Detailed parameter description:

- Product model: VBM165R25S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance at VGS=10V: 115m次
- Maximum drain current (ID): 25A
- Manufacturing process: SJ_Multi-EPI
-Package form: TO220

领域和模块应用:

Examples of applicable fields and modules:

1. Power module: VBM165R25S can be used as a switching power supply module, such as in industrial equipment, communication equipment and household appliances, to achieve high-efficiency power conversion and control.
2. Automotive electronics: This device is suitable for power switch modules in automotive electronic systems, such as engine control units (ECU), battery management systems (BMS) and electric vehicle drive systems, providing efficient power control and protection.
3. Solar inverter: As a key component in solar inverters, VBM165R25S can be used to convert and output photovoltaic energy to achieve stable operation of solar power generation systems.
4. Industrial automation: In industrial control systems, this device can be used in modules such as motor drive, switch control and power regulation to provide reliable power control and protection functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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