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VBM165R22 产品详细

产品简介:

Product introduction:
The VBsemi VBM165R22 is a single N-channel field effect transistor with a drain-to-source voltage (VDS) of up to 650V and a drain current (ID) of 22A. Manufactured using planar process technology, it has excellent performance and stability. The package is TO220, suitable for various applications.

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产品参数:

Detailed parameter description:
- Model: VBM165R22
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 280
- Drain current (ID): 22A
- Process technology: flat process
-Package:TO220

领域和模块应用:

Examples of applicable fields and modules:
1. Power module: Due to its high drain voltage and drain current, it is suitable for high-voltage power modules such as switching power supplies and DC-DC converters.
2. Driver module: Driver module that can be used to drive motors, relays and other high-power loads.
3. Electric vehicle charger: suitable for switching power supply and inverter module in electric vehicle charger to achieve high efficiency and fast charging.
4. Industrial control system: used in power management and motor drive modules in industrial control systems to improve system reliability and efficiency.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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