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VBM165R20S 产品详细

产品简介:

Product introduction:
VBM165R20S is a single N-channel MOSFET model produced by VBsemi. It has a drain-to-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a gate threshold voltage (Vth) of 3.5V, and a drain current (ID) of 20A. Manufactured using SJ_Multi-EPI technology and packaged in TO220.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Gate threshold voltage (Vth): 3.5V
- On-resistance (m次) when VGS=10V: 160
- Drain current (ID): 20A
- Technology: SJ_Multi-EPI

领域和模块应用:

Examples of applicable fields and modules:
1. Power supply voltage stabilizing module: VBM165R20S can be used as a power switch in the power supply voltage stabilizing module to stabilize the output voltage and current, and is suitable for various industrial equipment and consumer electronics products.
2. Electric vehicle charging piles: As a key component in charging piles, this type of MOSFET can be used for power conversion and current control of charging piles to ensure safe charging of electric vehicles.
3. Solar inverter: In solar power generation systems, VBM165R20S can be used as a switching device in the inverter to achieve effective conversion and utilization of solar energy.
4. Power electronic speed regulator: In power electronic speed regulators used for industrial motor speed control, this type of MOSFET can achieve efficient power conversion and regulation and improve the operating efficiency of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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