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VBM165R18 产品详细

产品简介:

Product introduction:
VBsemi's VBM165R18 is a single N-channel power MOSFET manufactured using planar technology. Its main features include a maximum drain-source voltage (VDS) of 650V, a maximum gate-source voltage (VGS) of ±30V, a threshold voltage (Vth) of 3.5V, an on-resistance of 430mΩ at VGS=10V, and a maximum Drain current (ID) is 18A. The package form is TO220.

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产品参数:

Detailed parameter description:
- VDS(V): 650V
- VGS(㊣V): ㊣30V
- Vth(V): 3.5V
- On-resistance (m次) when VGS=10V: 430m次
- ID (A): 18A
- Technology: Planner
-Package: TO220

领域和模块应用:

Examples of application areas and modules:
- Industrial power modules: Due to its high drain-source voltage and on-current capability, it is suitable for switching power supplies and inverters in industrial power modules.
- Electric vehicle charger: Able to handle high voltage and current in electric vehicle chargers, improving charging efficiency and performance.
- Solar inverter: used as a switching element in a solar inverter to achieve high-efficiency conversion from solar panels to the grid.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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