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VBM165R15S 产品详细

产品简介:

Product introduction:

VBM165R15S is a single N-channel MOSFET launched by the VBsemi brand, with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged in TO220.

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产品参数:

Detailed parameter description:

- Product model: VBM165R15S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 220m次
- Maximum drain current (ID): 15A
- Technology: SJ_Multi-EPI
-Package:TO220

领域和模块应用:

Examples of applicable fields and modules:

1. High-voltage power module: Because VBM165R15S has high drain voltage and low on-resistance, it is suitable for high-voltage power modules such as power inverters and frequency converters.
2. Industrial motor drive: used in industrial motor drive systems, including electric vehicles, industrial machinery and robots, to achieve efficient and reliable motor control.
3. Solar inverter: In solar power generation systems, VBM165R15S can be used as an inverter module to convert DC power generated by solar panels into AC power to power homes and commercial purposes.
4. Power management: Suitable for power management modules, including switching power supplies, power adapters and LED drivers, etc., for stable power output and energy-saving control.

The above are application examples of VBM165R15S products in different fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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