MOSFET

您现在的位置 > 首页 > MOSFET

VBM165R13S 产品详细

产品简介:

Product introduction: VBsemi's VBM165R13S is a single N-type field effect transistor with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a gate threshold voltage (Vth) of 3.5V. It is suitable for for various power applications.

文件下载

下载PDF 文档
立即下载

产品参数:

Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-to-source voltage): ㊣30V
- Vth (gate threshold voltage): 3.5V
- On-resistance (m次) when VGS=10V: 330
- Maximum drain current (ID): 13A
- Technology: SJ_Multi-EPI
-Package:TO220

领域和模块应用:

Application example:
- Power inverter: Due to its high drain-source voltage and large current capacity, it is suitable for solar inverters, UPS inverters, etc.
- Automotive electronics: Can be used in motor drive systems of hybrid vehicles and electric vehicles, supporting high voltage and high power requirements.
- Industrial control: In the field of industrial automation, it can be used in frequency converters, motor controllers and other equipment to provide efficient power conversion and reliable performance.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询