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VBM165R12S 产品详细

产品简介:

Product introduction:
VBM165R12S is a single N-channel field effect transistor launched by the VBsemi brand, packaged in TO220. It features a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. In addition, its on-resistance is 360mΩ when the gate-to-source voltage is 10V, and the maximum drain current (ID) is 12A. This product is manufactured using the SJ_Multi-EPI process.

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产品参数:

Detailed parameter description:
- Drain-source voltage (VDS): 650V
- Gate-source voltage (VGS): 30V
- Threshold voltage (Vth): 3.5V
- On-resistance when gate-source voltage is 10V: 360m次
- Maximum drain current (ID): 12A
- Manufacturing process: SJ_Multi-EPI
-Package:TO220

领域和模块应用:

Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power switch module: Due to its high drain-source voltage and low on-resistance, it can be used to design high-efficiency power switch modules, such as power inverters and switching power supplies.
2. Industrial driver: In the field of industrial automation, this product can be used in modules such as motor control, frequency converter and power transmission to improve the performance and stability of the system.
3. Automotive electronic modules: Suitable for modules such as electric vehicle charging piles, battery management systems and vehicle power supplies in automotive electronic systems to meet the needs of automotive electrical systems for high voltage and large current.
4. Solar inverter: As one of the key components of the solar inverter, this product can provide stable voltage output and efficient energy conversion, thereby improving the performance and reliability of the solar power generation system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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