产品简介：
**Product Introduction:**
VBM165R12 is a unipolar N-type field effect transistor launched by VBsemi. Features 650V drain-source voltage (VDS), 30V gate-source voltage (VGS), 3.5V threshold voltage (Vth), gate-source resistance at 10V gate-source voltage, and 12A drain current . Manufactured using Plannar technology and packaged in TO220, it is suitable for various power supplies and circuit modules.
**Detailed parameter description:**
- VDS(V): drain-source voltage, 650V
- VGS(±V): Gate-source voltage, ±30V
- Vth(V): threshold voltage, 3.5V
- VGS=10V(mΩ): Gate-source resistance (VGS=10V), 800mΩ
- ID (A): Drain current, 12A
- Technology: manufacturing technology, Plannar
-Package:TO220
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领域和模块应用：
**Applicable areas and module examples:**
1. **Power module**: Since VBM165R12 has high drain-source voltage and relatively low gate-source resistance, it is suitable for various power modules, including switching power supplies, inverters, etc.
2. **Motor drive**: As a field effect transistor, VBM165R12 can be used for various motor drives, such as DC motors, stepper motors, etc., and is especially suitable for high-power motor control.
3. **Industrial power system**: In industrial power systems that require high power control, such as converters, DC-AC converters, etc., VBM165R12 can be used as a key component to provide stable and reliable power control.
4. **Electric vehicle charger**: In electric vehicle chargers, components that need to withstand high voltage and high current are required. VBM165R12 can be used as a power switching device in the charger to achieve fast charging of electric vehicles.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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