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VBM165R11S 产品详细

产品简介:

Product introduction:

VBM165R11S is a single N-channel MOSFET launched by the VBsemi brand, with a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. It uses SJ_Multi-EPI technology and is packaged in TO220.

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产品参数:

Detailed parameter description:

- Product model: VBM165R11S
- Brand: VBsemi
- Type: Single N-channel MOSFET
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance when VGS=10V: 420m次
- Maximum drain current (ID): 11A
- Technology: SJ_Multi-EPI
-Package:TO220

领域和模块应用:

Examples of applicable fields and modules:

1. Industrial power module: VBM165R11S is suitable for industrial power modules, such as power inverters and frequency converters, to stabilize output voltage and frequency and realize power supply and control of industrial equipment.
2. Electric vehicle control: In the electric vehicle control system, the MOSFET can be used in the motor drive module to realize the power control and energy conversion of electric vehicles and improve the vehicle's power performance and energy efficiency.
3. Solar inverter: Inverter module used in solar power generation systems to convert DC power generated by solar panels into AC power to supply power to homes and commercial purposes.
4. LED lighting control: In LED lighting systems, VBM165R11S can be used in LED driver modules to control the brightness and color temperature of LED lights to achieve energy-saving and environmentally friendly lighting effects, and is suitable for indoor and outdoor lighting applications.

The above are examples of application of VBM165R11S products in different fields and modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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