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VBM165R08S 产品详细

产品简介:

Product introduction: VBsemi's VBM165R08S is a single N-channel power field effect transistor (FET) manufactured using SJ_Multi-EPI technology. Its package is TO220, which has stable and reliable performance. Suitable for various application scenarios requiring high performance single N-channel FET.

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产品参数:

Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, and threshold voltage (Vth) is 3.5V.
- Current parameters: At VGS=10V, the drain-source resistance (RDSon) is 550m次, and the maximum drain current (ID) is 8A.

领域和模块应用:

Applicable areas and modules:
1. Industrial electronics: used in industrial applications such as power converters, inverters and high-voltage motor drives.
2. Automotive electronics: Can be applied to motor control and battery management systems of hybrid vehicles.
3. Solar energy and renewable energy: suitable for energy conversion equipment such as solar inverters, photovoltaic power generation systems and wind power generation devices.
4. Medical equipment: Can be used in medical imaging equipment, high-voltage power supplies and power drive circuits.
5. Communication equipment: suitable for high-voltage power management modules in RF power amplifiers, base stations and communication systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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